- 您现在的位置：买卖IC网 > Sheet目录451 > IXFC60N20 (IXYS)MOSFET N-CH 200V 60A ISOPLUS220
ADVANCE TECHNICAL INFORMATION
HiPerFET TM MOSFET
ISOPLUS220 TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
IXFC 60N20
V DSS
I D25
R DS(on)
t rr
= 200
= 60
= 33
≤ 250
V
A
m ?
ns
High dv/dt, Low t rr , HDMOS TM Family
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 220 TM
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
200
200
± 20
V
V
V
V GSM
I D25
Transient
T C = 25 ° C
± 30
60
V
A
G
D
S
Isolated back surface*
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
240
60
A
A
G = Gate,
S = Source
D = Drain,
Silicon chip on Direct-Copper-Bond
E AR
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
30
1.0
5
230
mJ
J
V/ns
W
* Patent pending
Features
l
substrate
T J
T JM
T stg
T L
Weight
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
150
-55 ... +150
300
3
° C
° C
° C
° C
g
l
l
l
l
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsicRectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
l
l
l
DC-DC converters
Batterychargers
Switched-mode and resonant-mode
V DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 4 mA
200
2
4
V
V
l
l
power supplies
DC choppers
AC motor control
Easy assembly: no screws or isolation
Space savings
I GSS
I DSS
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
± 100 nA
25 μ A
1 mA
Advantages
l
foils required
l
R DS(on)
V GS = 10 V, I D = I T
Notes 1, 2
33 m ?
l
l
High power density
Low collector capacitance to ground
(low EMI)
? 2001 IXYS All rights reserved
98843 (6/01)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFC74N20P
MOSFET N-CH 200V 35A ISOPLUS220
IXFC80N085
MOSFET N-CH 85V 80A ISOPLUS220
IXFC80N10
MOSFET N-CH 100V 80A ISOPLUS220
IXFC96N15P
MOSFET N-CH 150V 42A ISPLUS220
IXFE180N10
MOSFET N-CH 100V 176A ISOPLUS227
IXFE180N20
MOSFET N-CH 200V 158A ISOPLUS227
IXFE23N100
MOSFET N-CH 1000V 21A ISOPLUS227
IXFE39N90
MOSFET N-CH 900V 34A ISOPLUS227
相关代理商/技术参数
IXFC74N20P
功能描述:MOSFET 35 Amps 200V 0.034 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFC80N08
功能描述:MOSFET 80 Amps 80V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFC80N085
功能描述:MOSFET 80 Amps 85V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFC80N10
功能描述:MOSFET 100 Amps 100V 0.0125 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFC96N15P
功能描述:MOSFET 42 Amps 150V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFE180N10
功能描述:MOSFET 176 Amps 1000V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFE180N20
功能描述:MOSFET 180 Amps 200V 0.01 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFE23N100
功能描述:MOSFET 21 Amps 1000V 0.43 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube